t gf20 25 250 um discrete gaas phemt datasheet: rev . d 11 - 04 - 13 - 1 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com applications ? defense & aerospace ? high - reliability ? test and measurement ? commercial ? broadband wireless product features ? frequency range: dc? - ? 20 ghz ? 2 4 dbm typical output power - p1db ? 14 db typical gain at 12 ghz ? 5 8 % typical pae at 12 ghz ? 0.9 db typical nf at 12 gh z ? no vias ? technology: 0.25 um gaas phemt ? chip dimensions: 0.41 x 0.34 x 0.10 mm functional block diagram gate drain source general description the triquint tgf 2025 is a discrete 250 m icron phemt which operates from dc to 20 ghz. the tgf 2025 is fabricated using tr iquints proven standard 0. 25 um power phemt production process. this process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. the tgf 2025 typically provides 24 dbm of output power at p1db wi th gain of 14 db and 5 8 % power - added efficiency at 1 db compression. this performance makes the TGF2025 appropriate for high efficiency applications. the protective overcoat layer with silicon nitride provides a level of environmental robustness and scr atch protection . the TGF2025 is l ead - free and rohs compliant . p ad configuration p ad dimensions terminals g (71um x 71um) gate d (71um x 71um) drain s (121um x 71um) source ordering information part eccn description tgf20 25 ear99 250 um gaas phemt
t gf20 25 250 um discrete gaas phemt datasheet: rev . d 11 - 04 - 13 - 2 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com absolute maximum ratings symbol parameter absolute continuous units v ds drain - source voltage ( 2 ) 12 8 v v gs gate - source voltage - 7 - 3 v i d s drain current ( 2 ) idss idss ma i g,f forward gate current 12 2 ma t ch channel temperature ( 3 ) 175 ( 4) 150 (5) c t stg storage temperature - 65 to 150 - 65 to 150 c p in input continuous wave power ( 2 ) 1 8 at 3 db compression dbm p tot total power dissipation 1.34 0. 89 w notes: 1. these ratings represent the maximum operable values for this device. stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device and/or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2. combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum total power dissipation listed in the table. 3. junction operating temperature will directly affect the device median time to failure. for maximum life, it is recommended t ha t junction temperatures be maintained at the lowest possible levels. 4. when operated at this channel temperature, the median life is 1.0e+5 hours. 5. when operated at this channel temperature, the median life is 1.0e+6 hours. electrical characteristics t est conditions unless otherwise noted: temperature ? = ? 25 c symbol parameter conditions min typ max units p1db output power at 1db compression freq ? = ? 12 ? ghz v ds ? = ? 8 ? v i ds ? = ? 50% ? i dss 2 4 dbm g1db gain at p1db 14 db pae pae at p1db 5 8 % nf 50 ohm noise figure v ds ? = ? 2 ? v, i ds ? = ? 19 ma 0.90 db i dss saturated drain current v ds ? = ? 2 ? v, v g s ? = ? 0 ? v 50 8 1 ( 1 ) 112 ma gm transconductance v ds ? = ? 2 ? v, i ds ? = ? 50% ? i dss 9 7 ms v p pinch - off voltage v ds ? = ? 2 ? v, i ds ? = ? 0.18 ? ma - 1.5 - 1.0 - 0.5 v bv gd gate - drain breakdown voltage i g ? = ? 0.18 ? ma, source open - 15 - 12 v bv gs gate - source breakdown voltage i g ? = ? 0.18 ? ma, drain open - 1 5 v r th thermal resistance ( 2 ) ausn eutectic attach 62.5 c/w notes: 1. typical standard deviation of 2 ? ma (1 ? ). 2. based on ir scan
t gf20 25 250 um discrete gaas phemt datasheet: rev . d 11 - 04 - 13 - 3 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com s - parameters test conditions: v ds =+8 v (typ.), i ds =50% i d ss, temp=+25c, 50 system freq (ghz) s11 (mag) s11 (ang) s21 (mag) s21 (ang) s12 (mag) s12 (ang) s22 (mag) s22 (ang) 1 0.98 - 25.0 7.88 162.0 0.020 72.9 0.73 - 10.1 2 0.95 - 49.0 7.45 146.6 0.037 61.3 0.70 - 19.7 3 0.92 - 71.5 6.86 132.2 0.051 49.9 0.66 - 2 7.9 4 0.88 - 92.3 6.23 118.9 0.062 39.4 0.61 - 35.0 5 0.85 - 110.7 5.62 106.9 0.069 30.2 0.56 - 41.4 6 0.83 - 127.1 5.04 96.2 0.074 22.3 0.52 - 46.8 7 0.82 - 141.7 4.54 86.5 0.077 15.3 0.49 - 51.4 8 0.81 - 155.0 4.10 77.6 0.079 9.3 0.46 - 55.0 9 0.81 - 167.1 3. 70 69.2 0.079 3.7 0.44 - 59.1 10 0.80 - 177.6 3.35 61.6 0.079 - 1.4 0.42 - 63.0 11 0.80 173.2 3.04 54.5 0.078 - 5.5 0.40 - 67.2 12 0.81 164.9 2.78 47.6 0.076 - 9.4 0.39 - 71.3 13 0.81 157.4 2.56 40.8 0.075 - 13.2 0.39 - 75.8 14 0.82 150.9 2.36 34.4 0.073 - 16.5 0.38 - 80.1 15 0.83 144.8 2.19 28.8 0.071 - 18.8 0.37 - 84.6 16 0.84 139.0 2.04 23.2 0.069 - 20.8 0.37 - 88.7 17 0.85 134.0 1.90 17.7 0.068 - 22.8 0.36 - 94.5 18 0.85 128.9 1.76 12.3 0.066 - 24.8 0.36 - 100.3 19 0.84 124.6 1.64 7.5 0.063 - 26.0 0.37 - 105.2 20 0.86 121.5 1.56 2.6 0.062 - 26.4 0.38 - 110.5 21 0.88 116.9 1.47 - 2.6 0.061 - 27.4 0.38 - 116.5 22 0.89 113.5 1.38 - 7.7 0.059 - 28.4 0.39 - 122.0 23 0.89 110.1 1.31 - 12.7 0.058 - 29.4 0.39 - 127.3 24 0.89 106.9 1.23 - 17.4 0.057 - 29.1 0.40 - 133.1 25 0.90 103.9 1.16 - 22.2 0.056 - 28.9 0.41 - 138.7 26 0.91 100.9 1.10 - 26.9 0.056 - 29.2 0.42 - 144.3 includes 1 bond wire on gate, 1 bond wire on drain, and 3 bond wires on each source pad.
t gf20 25 250 um discrete gaas phemt datasheet: rev . d 11 - 04 - 13 - 4 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com noise parameters v ds ?=?2 ? v, i ds ?= ? 40 ? ma, temp .? =?25c v ds ?=?2 v, i ds ?=? 20 ma, temp .? =?25c frequency nfmin rn/50 gamma frequency nfmin rn/50 gamma ghz db mag. angle ghz db mag. angle 2 0.79 0.29 0.49 24.8 2 0.45 0.18 0 0.66 17.3 3 0.81 0.271 0.49 36.8 3 0.47 0.173 0.63 25.7 4 0.83 0.247 0.5 0 51.7 4 0.48 0.164 0.59 36.6 5 0.87 0.225 0.51 67.6 5 0.5 0 0.155 0.56 48.7 6 0.96 0.197 0.52 82.7 6 0.55 0.14 0 0.53 60.8 7 1.07 0.168 0.53 97.0 7 0.61 0.127 0.50 72.9 8 1.17 0.141 0.54 110.5 8 0.67 0.113 0.48 84.8 9 1.26 0.118 0.55 123.2 9 0.72 0.102 0.46 96.7 10 1.35 0.098 0.55 135.2 10 0.77 0.092 0.44 108.3 11 1.46 0.081 0.56 146.5 11 0.83 0.084 0.43 119.7 12 1.57 0.067 0.57 157.0 12 0.89 0.076 0.42 130.8 13 1.67 0.06 0 0.57 167.0 13 0.94 0.07 0 0.41 141.6 14 1.8 0 0.06 0 0.58 176.2 14 1 .00 0.066 0.41 152.1 15 1 .92 0.067 0.58 - 175.1 15 1.04 0.063 0.42 162.1 16 2.06 0.084 0.59 - 167.0 16 1.1 0 0.062 0.42 171.8 17 2.19 0.111 0.59 - 159.5 17 1.14 0.064 0.43 - 179.1 18 2.33 0.149 0.59 - 152.5 18 1.2 0 0.067 0.45 - 170.5 19 2.48 0.197 0.6 - 146.1 19 1.23 0.072 0.46 - 162.4 20 2.64 0.262 0.6 - 140.1 20 1.26 0.082 0.49 - 155.0 21 2.83 0.346 0.6 - 134.6 21 1.34 0.097 0.51 - 148.2 22 3.03 0.45 0.6 - 129.5 22 1.42 0.119 0.54 - 142.1 23 3.27 0.567 0.61 - 124.9 23 1.5 0 0.143 0.57 - 136.8 24 3.45 0.695 0.61 - 120.6 24 1.53 0. 166 0.61 - 132.2 25 3.58 0.825 0.61 - 117.0 25 1.56 0.186 0.65 - 128.7 26 3.67 0.942 0.61 - 114.4 26 1.58 0.203 0.68 - 126.3
t gf20 25 250 um discrete gaas phemt datasheet: rev . d 11 - 04 - 13 - 5 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com rf tuned data at 12 ghz bias conditions unless otherwise noted : v d ? = ? 8 ? v, i dq ? = ?50% i dss , f?=?12 ghz 0% 10% 20% 30% 40% 50% 60% 70% 0 5 10 15 20 25 30 35 - 10 - 5 0 5 10 15 pae (%) gain (db) / pout (dbm) pin (dbm) gain / pout / pae vs. pin temp.=+25 gain pae pout 0% 10% 20% 30% 40% 50% 60% 70% 0 5 10 15 20 25 30 35 5 10 15 20 25 pae (%) gain (db) pout (dbm) gain / pae vs. pout temp.=+25 c pae gain
t gf20 25 250 um discrete gaas phemt datasheet: rev . d 11 - 04 - 13 - 6 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com typical p erformance ? various bias conditions 0 1 2 3 4 5 0 5 10 15 20 25 2 6 10 14 18 22 26 nfmin (db) associated gain (db) frequency (ghz) nfmin and associated gain vs. frequency v ds =+5 v, i ds = 40 ma temp.=+25 c gain nfmin 0 1 2 3 4 5 0 5 10 15 20 25 2 6 10 14 18 22 26 nfmin (db) associated gain (db) frequency (ghz) nfmin and associated gain vs. frequency v ds =+2 ? v, i ds p temp.=+25 c gain nfmin 0 1 2 3 4 5 0 5 10 15 20 25 2 6 10 14 18 22 26 nfmin (db) associated gain (db) frequency (ghz) nfmin and associated gain vs. frequency v ds =+2 v, i ds = 20 ma temp.=+25 c gain nfmin
t gf20 25 250 um discrete gaas phemt datasheet: rev . d 11 - 04 - 13 - 7 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com dc characteristics 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 drain current, i ds (a) drain voltage, v ds (v) drain current vs. drain voltage v gs = 0.0?v v gs = - 0.1 ? v v gs = - 0.2?v v gs = - 0.3?v v gs = - 0.4?v v gs = - 0.5?v v gs = - 0.6v v gs = - 0.7?v v gs = - 0.8v v gs = - 0.9?v v gs = - 1.0?v temp.=+25 c assembly notes component placement and adhesive attachment assembly notes: x vacuum pencils and/or vacuum collets are the preferred method of pick up. x air bridges must be avoi ded during placement. x the force impact is critical during auto placement. x organic attachment (i.e. epoxy) can be used in low - power applications. x curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: x recommend eutectic die attach with ausn (80/20) solder and limit exposure to temperatures above 300 q c to 30 seconds, maximum. x an alloy station or conveyor furnace with reducing atmosphere should be used. x do not use any kind of flux. x coefficient of thermal expansion matching is critical for long - term reliability. x devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: x either thermo - compression wedge bonding or thermosonic ball bonding can be used to bond onto the die. x forc e, time, and ultrasonics are critical bonding parameters. x aluminum wire should not be used. x devices with small pad sizes should be bonded with 0.0008 - inch wire.
t gf20 25 250 um discrete gaas phemt datasheet: rev . d 11 - 04 - 13 - 8 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com product compliance information esd sensitivity caution! esd - sensitive device ga as devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. rohs compliance this part is compliant with eu 2002/95/ec rohs directive (re strictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free not hast c ompliant. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 503. 615 . 9000 email: info - sales@triquint.com fax: +1. 503. 615 . 8902 for technical questions and application information: email: info - net works @triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the info rmation contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained h erein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
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